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INTEGRATED CIRCUITS
DATA SHEET
TZA3033 SDH/SONET STM1/OC3 transimpedance amplifier
Objective specification File under Integrated Circuits, IC19 1998 Jul 08
Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
FEATURES * Low equivalent input noise, typically 1 pA/Hz * Wide dynamic range, typically 0.25 A to 1.6 mA * Differential transimpedance of 117 k * Bandwidth minimum 150 MHz * Differential outputs * On-chip AGC (Automatic Gain Control) * No external components required * Single supply voltage from 3.0 to 5.5 V * Bias voltage for PIN diode * Pin compatible with SA5223. ORDERING INFORMATION TYPE NUMBER TZA3033T TZA3033U PACKAGE NAME SO8 naked die DESCRIPTION plastic small outline package; 8 leads; body width 3.9 mm die in waffle pack carriers; die dimensions 0.960 x 1.210 mm APPLICATIONS
TZA3033
* Digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high speed data networks * Wideband RF gain block. GENERAL DESCRIPTION The TZA3033 is a low-noise transimpedance amplifier with AGC designed to be used in STM1/OC3 fibre optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage.
VERSION SOT96-1 -
BLOCK DIAGRAM
handbook, full pagewidth
AGC(1)
VCC 8 (13, 14)
VCC 1 nF DREF 1 (1) 65 pF IPhoto 3 (5) A1 low noise amplifier 2 k GAIN CONTROL
(15)
peak detector
(12) 7 A2 single-ended to differential converter (11) 6
OUTQ OUT
TZA3033
BIASING 3 2, 4, 5 (3, 4, 7, 8, 9, 10)
MGR368
GND
(1) AGC analog I/O is only available on the TZA3033U (pad 15). The numbers in brackets refer to the pad numbers of the naked die version.
Fig.1 Block diagram.
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
PINNING SYMBOL DREF GND IPhoto GND GND OUT OUTQ VCC PIN 1 2 3 4 5 6 7 8 TYPE analog output ground analog input ground ground data output data output supply ground DESCRIPTION
TZA3033
bias voltage for PIN diode (VCC); cathode should be connected to this pin current input; anode of PIN diode should be connected to this pin; DC bias voltage is 1048 mV ground ground data output; OUT goes HIGH when current flows into IPhoto (pin 3) compliment of OUT (pin 6) supply voltage
handbook, halfpage
DREF 1 GND 2
8 VCC 7 OUTQ OUT GND
TZA3033T
IPhoto GND 3 4
MGR369
6 5
Fig.2 Pin configuration.
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
PAD CONFIGURATION Bonding pad locations
handbook, full pagewidth
TZA3033
1
DREF
8
VCC
GND
2
1
TESTA
AGC
7
14 13
OUTQ
15
2 3 4 5
TZA3033U
12 11
TESTB
6
7
8
9 10
IPhoto
3
6
OUT
GND
GND
4
5
MGR371
Pad 15 (AGC) is not bonded.
Fig.3 Bonding diagram TZA3033U.
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
Pad centre locations COORDINATES(1) SYMBOL DREF TESTA GND GND IPhoto TESTB GND GND GND GND OUT OUTQ VCC VCC AGC Note 1. All coordinates (m) are measured with respect to the bottom left-hand corner of the die. PAD x 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 95 95 95 95 95 95 215 360 549 691 785 785 567 424 259 y 881 735 618 473 285 147 95 95 95 95 501 641 1055 1055 1055 FUNCTIONAL DESCRIPTION
TZA3033
The TZA3033 is a transimpedance amplifier intended for use in fibre optic links for signal recovery in STM1/OC3 applications. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and transforms it into a differential output voltage. The most important characteristics of the TZA3033 are high receiver sensitivity and wide dynamic range. High receiver sensitivity is achieved by minimizing noise in the transimpedance amplifier. The signal current generated by a PIN diode can vary between 0.25 A to 1.6 mA (peak-to-peak value). An AGC loop (see Fig.1) is implemented to make it possible to handle such a wide dynamic range. The AGC loop increases the dynamic range of the receiver by reducing the feedback resistance of the preamplifier. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not needed for AGC. The AGC voltage can be monitored at pad 15 on the naked die (TZA3033U). Pad 15 is not bonded in the packaged device (TZA3033T). This pad can be left unconnected during normal operation. It can also be used to force an external AGC voltage. If pad 15 (AGC) is connected to VCC, the internal AGC loop is disabled and the receiver gain is at a maximum. The maximum input current is then about 10 A. A differential amplifier converts the output of the preamplifier to a differential voltage. The data output circuit is given in Fig.4. The logic level symbol definitions are shown in Fig.5.
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
handbook, full pagewidth
VCC 800 800 30 OUTQ 30 OUT 4.5 mA 2 mA 4.5 mA
MGR290
Fig.4 Data output circuit.
handbook, full pagewidth
VCC VO(max) VOQH VOH Vo(p-p) VOQL VOL VO(min) VOO
MGR243
Fig.5 Logic level symbol definitions for data outputs OUT and OUTQ.
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Vn supply voltage DC voltage pin 3/pad 5: IPhoto pins 6 and 7/pads 11 and 12: OUT and OUTQ pad 15: AGC (TZA3033U only) pin 1/pad 1: DREF In DC current pin 3/pad 5: IPhoto pins 6 and 7/pads 11 and 12: OUT and OUTQ pad 15: AGC (TZA3033U only) pin 1/pad 1: DREF Ptot Tstg Tj Tamb total power dissipation storage temperature junction temperature ambient temperature -1 -15 -0.2 -2.5 - -65 - -40 +2.5 +15 +0.2 +2.5 300 +150 150 +85 -0.5 -0.5 -0.5 -0.5 +2 PARAMETER MIN. -0.5
TZA3033
MAX. +5.5 V V V V V
UNIT
VCC + 0.5 VCC + 0.5 VCC + 0.5
mA mA mA mA mW C C C
THERMAL CHARACTERISTICS SYMBOL Rth(j-s) Rth(j-a) PARAMETER thermal resistance from junction to solder point thermal resistance from junction to ambient VALUE tbf tbf UNIT K/W K/W
CHARACTERISTICS For typical values Tamb = 25 C and VCC = 5 V; minimum and maximum values are valid over the entire ambient temperature range and process spread. SYMBOL VCC ICC Ptot Tj Tamb Rtr PARAMETER supply voltage supply current total power dissipation junction temperature ambient temperature small-signal transresistance of the receiver measured differentially; AC coupled RL = RL = 50 f-3dB(h) high frequency -3 dB point Ci = 0.7 pF - - 120 234 117 150 - - - k k MHz AC coupled; RL = 50 VCC = 5 V VCC = 3.3 V CONDITIONS 3 - - - -40 -40 MIN. 5 37 185 116 - +25 TYP. 5.5 - - - +120 +85 MAX. UNIT V mA mW mW C C
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
TZA3033
SYMBOL In(tot)
PARAMETER total integrated RMS noise current over bandwidth
CONDITIONS referred to input; note 1 f = 90 MHz f = 120 MHz f = 150MHz - - - - measured differentially; note 2 f = 100 kHz to 10 MHz f = 100 MHz - -
MIN. 16 tbf tbf 1
TYP. - - - -
MAX.
UNIT nA nA nA dB/ms
Rtr/t PSRR
AGC loop constant power supply rejection ratio
0.5 10
- -
A/V A/V A A mV
Input: IPhoto Ii(IPhoto)(p-p) input current on pin IPhoto (peak-to-peak value) input bias voltage on pin IPhoto AC coupled; RL = 50 AC coupled; RL = 50 VCC = 5 V VCC = 3.3 V -500 -500 - +1 +1 1048 +1800 +1600 -
Vbias(IPhoto)
Data outputs: OUT and OUTQ VO(CM) Vo(se)(p-p) common mode output voltage single-ended output voltage (peak-to-peak value) differential output offset voltage output resistance rise time fall time single-ended; DC tested 20% to 80% 80% to 20% VCC - 1.800 VCC - 1.700 VCC - 1.600 V - 150 260 mV
VOO Ro tr tf Notes
-100 42 - -
- 50 tbf tbf
+100 58 - -
mV ps ps
1. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package. 2. PSRR is defined as the ratio of the equivalent current change at the input (IIPhoto) to a change in supply voltage: I IPhoto PSRR = ------------------V CC For example, a disturbance of +4 mV disturbance on VCC at 10 MHz will typically add an extra 2 nA to the photodiode current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with an external capacitor of 1 nF.
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
APPLICATION INFORMATION
TZA3033
handbook, full pagewidth
10 H VP 22 nF VCC 8 DREF 1 7 OUTQ OUT Zo = 50 2 GND 4 GND 5 GND
MGR370
680 nF
Zo = 50
100 nF
TZA3033T
IPhoto 1 nF 6 3
100 nF R3 50 R4 50
Fig.6 Application diagram.
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
TZA3033
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TZA3033
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TZA3033
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
NOTES
TZA3033
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
NOTES
TZA3033
1998 Jul 08
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Philips Semiconductors
Objective specification
SDH/SONET STM1/OC3 transimpedance amplifier
NOTES
TZA3033
1998 Jul 08
15
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SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
425102/1200/01/pp16
Date of release: 1998 Jul 08
Document order number:
9397 750 03878

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